Memory

Designs and form factors for any industrial application

Virtium’s DRAM memory modules are designed to meet mission-critical, extreme temperatures, high-reliability and long life requirements for the most demanding embedded designs. Our extensive engineering expertise enables us to deliver small-form-factor memory in the highest density, lowest profile and smallest form factors possible. Virtium has applied patented design and component stacking techniques to improve system reliability and increase MTBF.

DDR4

DDR4-ULP

As one of the first manufacturers to offer DDR4 memory, Virtium enables embedded industrial OEM customers early test and development access to the lower power, high bandwidth and density benefits of this latest DRAM technology.

Delivering significant power savings of up to 40% and up to twice the bandwidth over DDR3, Virtium’s DDR4 modules are excellent solutions for server blades, networking and telecom applications.

DDR4 Memory Power Calculator (Excel Download)

Specifications

Densities 4GB, 8GB, 16GB and 32GB
Form Factors  DIMM, SODIMM and Mini-DIMM
Height  Standard, VLP and ULP
Type  Registered for Unbuffered
Error Correction  ECC or Non-ECC
Speed  PC4-1866, PC4-2133 and PC4-2400
Data Transfer Speed  1866 MT/s, 2133 MT/s and 2400MT/s
Voltage  1.2 VDC
Standard Temp.  0°C to 85°C
Extended Temp.  -25°C to 95°C
Industrial Temp.  -40°C to 95°C
Chip Configuration  x8 and x4
Rank  Single, Dual and Quad
Warranty  5 years
DDR3

DDR3-ProductVirtium DDR3 memory modules are available in densities up to 32GB in a variety of form factors and heights.

Virtium DDR3 modules deliver higher memory bandwidth and lower power consumption and are supported by leading-edge CPU processors.

Specifications

Densities 4GB, 8GB, 16GB and 32GB
Form Factors  DIMM, SODIMM and Mini-DIMM
Height  Standard, VLP and ULP
Type  Registered for Unbuffered
Error Correction  ECC or Non-ECC
Speed  PC4-1866, PC4-2133 and PC4-2400
Data Transfer Speed  1866 MT/s, 2133 MT/s and 2400MT/s
Voltage  1.2 VDC
Standard Temp.  0°C to 85°C
Extended Temp.  -25°C to 95°C
Industrial Temp.  -40°C to 95°C
Chip Configuration  x8 and x4
Rank  Single, Dual and Quad
Warranty  5 years
DDR2

DDR2-ProductIndustrial DDR2 SDRAM improvements over first gen. DDR included: reduced clock speed  resulting in higher bus speed. Operating voltage was reduced from 2.5 Volts to 1.8 volts to reduce power consumption and facilitate the use of smaller semiconductor fabrication processes. DDR2 generation also saw the introduction of additional form factors as listed below.

Virtium contributed to the advancement of the DDR2 generation with the development of ECC VLP RDIMM targeted at AdvancedTCA applications.

Specifications

Densities 1GB, 2GB, 4GB, and 8GB
Form Factors DIMM, SODIMM and Mini-DIMM
Height Standard, VLP and Blade VLP
Registered RDIMM, SO-RDIMM and Mini-RDIMM
Unbuffered UDIMM, SO-CDIMM and Mini-UDIMM
ECC All form factors
Non-ECC SODIMM
Speed PC2-6400, PC2-5300, PC2-4200 and PC2-3200
Voltage 1.8 VDC
Standard Temp.  0°C to 85°C
Extended Temp. -25°C to 95°C
Industrial Temp. -40°C to 95°C
Configuration x8 and x4
Rank 1,2 and 4
Warranty 5 Years
DDR

DDR-small
DDR SDRAM was the follow-on technology to SDRAM and is the predecessor to subsequent generations of DDR2 and DDR3. DDR provides a lower voltage level and higher data transfer compared to SDRAM. The voltage level is reduced from 3.30 volts to 2.50 volts and the memory module provides a data transfer on both transitions of the clock signal. This produces more data transfers for a given clock speed, but with the drawback of increased latency.

Virtium supports DDR modules in a wide range of configurations and features that are available in 184 and 200 pin DIMM and 200 pin SODIMM form factors.

Specifications

Densities 256MB,  512MB, 1GB, 2GB and 4GB
Form Factors DIMM, SODIMM and Mini-DIMM
Height Standard, VLP and Blade VLP
Registered RDIMM and SODIMM
Unbuffered UDIMM, Unb and SODIMM
ECC All form factors
Non-ECC All form factors
Speed PC3200, PC2700 and PC2100
Voltage  2.5 VDC
Standard Temp.  0°C to 85°C
Extended Temp. -25°C to 95°C
Industrial Temp. -40°C to 95°C
Configuration x8 and x4
Rank 1,2 and 4
Warranty 5 Years
SDRAM

Product_SDRAM(1)SDRAM (Synchronous Dynamic Random Access Memory) became a JEDEC standard in 1993, and became the dominant memory interface by the year 2000. SDRAM was targeted at the 66 MHz and 100 MHz bus speeds available on PC motherboards at the time and was a successor technology to EDO DRAM.

Virtium continues to offer this tried-and-true early industry standard for legacy customer designs.

 

Specifications

Densities 256MB, 512MB and 1GB
Form Factors DIMM and SODIMM
Height Standard and VLP
Registered RDIMM and SODIMM
Unbuffered UDIMM, SO-RDIMM
ECC All form factors
Non-ECC All form factors
Speed PC133 and PC100
Voltage  2.5 VDC
Standard Temp.  0°C to 85°C
Extended Temp. -25°C to 95°C
Industrial Temp. -40°C to 95°C
Configuration x8 and x4
Rank 1,2 and 4
Warranty 5 Years

Virtium also offers advanced small form factor ruggedized features such as thermal heat spreaders, conformal coating, thermal sensors and under fill.  This technology enables our memory modules to withstand the industrial temperature, shock and vibration requirements of many embedded systems.


Resources

Density and Rank
Module Density1 Module Configuration2 Chip Configuration3 Chip Density4 Number of Chips5 Rank6
1GB 128 x 72 128 x 8 1 Gb 9 1
64 x 8 512 Mb 18 2
2GB 256 x 72 256 x 8 2 Gb 9 1
128 x 8 1 Gb 18 2
4GB 512 x 72 512 x 8  4 Gb 9 1
256 x 8 2 Gb 18 2
128 x 8 1 Gb 36 4
8GB 1 G  x 72 1 G x 8 8 Gb 9 1
512 x 8 4 Gb 18 2
256 x 8 2 Gb 36 4

1:  Module density is always writen with capital “B” and pronounced as Bytes; 1 Byte = 8 bits
2:  x72 means ECC;  x64 is non ECC
3:  Number of cells in a x8 chip (depth x width).  x4 and x16 chips also available
4:  Chip density is always writen with small “b” and pronouced as bits
5:  Numbers of chips that assembled on the PCB to make the module density
6:  Number of chip selects

Module Dimensions

Memory Form Factor

Product Specifications

DDR Technology Comparison

This page provides information about the differences in DRAM technologies and shows you new support features for new DRAM technology.

DRAM Technology Comparison SDR DRAM DDR SDRAM DDR2 SDRAM DDR3 SDRAM DDR4 SDRAM
Module Bandwidth (MB/s)

Module speed bin, 64bit data bus

528

800

1064

PC-1600

PC-2100

PC-2700

PC-3200

PC2-3200

PC2-4200

PC2-5300

PC2-6400

PC3-6400

PC3-8500

PC3-10600

PC3-12800

PC4-2133

PC4-2400

PC4-2666

PC4-3200

Data rate (Mb/s per pin),

Chip speed bin (*Note 3)

PC66

PC100

PC133

DDR-200

DDR-266

DDR-333

DDR-400

DDR2-400

DDR2-533

DDR2-667

DDR2-800

DDR3-800

DDR3-1066

DDR3-1333

DDR3-1600

DDR4-2133

DDR4-2400

DDR4-2666

DDR4-3200

Clock (Mhz) 66

100

133

100

133

166

200

200

266

333

400

400

533

666

800

1067

1200

1600

Module ranks

(# of chip select lines)

1, 2 1, 2, 4 1, 2, 4 1, 2, 4 1, 2, 4
Module data bus width

(I/O organization)

x64,

(x72 with ECC)

x16, x32, x64,

(x72 with ECC)

x16, x32, x64,

(x72 with ECC)

x16, x32, x64,

(x72 with ECC)

x16, x32, x64

(x72 with ECC)

JEDEC Modules and

JEDEC Form Factors

VLP VLP VLP
RDIMM RDIMM RDIMM RDIMM RDIMM
UDIMM UDIMM UDIMM UDIMM UDIMM
SODIMM SODIMM SODIMM SODIMM SODIMM
SO-CDIMM SO-UDIMM SODIMM ECC
SO-RDIMM SO-RDIMM Reg SODIMM ECC
microDIMM microDIMM microDIMM
mini-DIMM mini-DIMM mini-DIMM
FB-DIMM LR-DIMM LR-DIMM
16b-SODIMM 16b-SODIMM
32b-SODIMM 32b-SODIMM
32b-DIMM
Module Thermal Sensor SODIMM

FB-DIMM

SODIMM

LR-DIMM

All
Module pin-out (*Note 1) New Same as DDR2
Module Densities up to 256MB 128MB to 2GB 256MB to 4GB 1GB to 32GB 4GB to 64GB
Chip Densities 32Mb to 256Mb 128Mb to 1Gb 256Mb to 2Gb 512Mb to 8Gb 4Gb to 8Gb
Chip Density @ Lowest Cost per Bit 128Mb 256Mb 512Mb 1Gb 4Gb
Chip data bus width

(I/O organization)

x4, x8, x16 x4, x8, x16 x4, x8, x16 x4, x8, x16
Voltage (VDD = VDDQ/[V]) 3.3 (+/- 0.3) 2.5 (+/- 0.2) 1.8 (+/- 0.1) 1.5 (+/- 0.075) 1.25V
% Power Reduction from previous generation (VDD only) (*Note 2) 32% reduction 39% reduction 20% reduction 25% reduction
On-die Thermal Sensor (ODTS) Each DRAM Each DRAM
Interface LVTTL SSTL_2 SSTL_18 SSTL_15
DRAM Banks (inside the chip) 2/4 4 4 (8 for 1Gb) 8
Prefetch (bits) 1 2 4 8
Burst length (*Note 5) 1, 2, 4, 8 (page) 2, 4, 8 4, 8 8 (4 burst chop)
Bidirectional strobe None Single Ended (SE) SE, Differential optional Differential only
DQ driver strength/calibration Wide envelope Narrow envelope 18 Ω ,OCD calibration 34 Ω , ZQ-pin self-calibration
Termination only on MoBo MoBo/ODT

values = 50, 75, 150, or “off””

DIMM/Dynamic ODT
Read Latency (*Note 3) CL = (1), 2, 3 CL = (1.5), 2, 2.5, (3) CL = (2), 3, 4, 5 CL = 5, 6, 7, 8, 9, 10, (11)
Read Additional Latency AL = 0, 1, 2, 3, 4 AL = 0, CL-1, CL-2
Write Latency 0 1 RL-1 5, 6, 7, 8 + AL
Data mask Yes Yes Yes Yes
Interrupts Yes Yes Wr-Wr, Rd-Rd 4n only Burst Chop for Rd and Wr
DRAM Package (monolithic) TSOP-54 TSOP-66, BGA FBGA only FBGA only FBGA only
DRAM ballout

(On-DIMM Mirror friendly)

No No No Yes
Asynchronous Master RESET pin No No No Yes. Interrupt reset for system flexibility.
Support of system level flight time compensation No No No Yes
DRAM CWL (programable CAS Write Latency) per speed bin

(*Note 6)

No No No Yes
On-die IO calibration engine No No No Yes. (data auto-calibration on the output buffer for high speed interface operation through ZC)
Fly-by CAC

(command/address/control)

bus with On-DIMM termination

No No No Yes
Read/Write Leveling No No No Yes
Memory sockets per channel

(*Note 4)

4 4 4 4/2
High precision calibration resistors on the DIMM No No No Yes

Notes: 

  1. DDR2 and DDR3 UDIMMs and RDIMMs have a 240-pin, 1.0mm pitch memory sockets.
  2. DDR3 may be as much as 30% reduction over DDR2 at the same speed, when considering lower IDD currents and other DDR3 architectural changes. DDR3-1600 is at the same power level, as DDR2-800.
  3. DDR3 has higher CAS Latency then DDR2: DDR3-800 (5-5-5), DDR3-1066 (7-7-7), DDR3-1333 (8-8-8), DDR3-1333 (9-9-9).
  4. The memory sockets (slots) per channel is memory controller and motherboard dependent. RDIMMs may have more slots then UDIMM. Faster and higher density DIMMs may require less slots per channel.
  5. “DDR3 Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]”.
  6. DDR3 Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600).
Form Factors
Parameters LRDIMM DIMM(Reg. & Unb. ECC) Mini-DIMM(Reg. & Unb. ECC) SODIMM nonECC SODIMM ECC Micro-DIMM
Industry standard module W:133.35 mmH:30.00 mm

T:4.00 mm

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W:82.00 mmH:30.00 mm

T:3.80 mm

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W:67.60 mmH:30.00 mm

T:3.80 mm

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W:67.60 mmH:30.00 mm

T:3.80 mm

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W:54.00 mmH:30.00 mm

T:3.95 mm

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Maximum number of footprint DRAM per module (based on 2Gbit monolithic DRAM) 36 36 18 16 18 8
Module density (based on 2Gbit monolithic DRAM) 8GB 8GB 4GB 4GB 4GB 2GB
Industry standard VLP module Under development W:133.35 mmH:18.75 mm

T:4.00 mm

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Not available Under development Not available Not available
Maximum number of footprint DRAM per module (based on 2Gbit monolithic DRAM) 18 18 9 8 9 N/A
Module density (based on 2Gbit monolithic DRAM) 4GB 4GB 2GB 2GB 2GB N/A
Application specific/Enhanced memory module Under development W:133.35 mmH:18.29 mm

T:3.67 mm

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W:82.00 mmH:18.29 mm

T:3.40 mm

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W:67.60 mmH:18.29 mm

T:3.40 mm

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W:67.60 mmH:18.29 mm

T:3.40 mm

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N/A
Maximum number of footprint DRAM per module (based on 2Gbit monolithic DRAM) 18 18 18 8 9 N/A
Module density (based on 2Gbit monolithic DRAM) 4GB 4GB 4GB 2GB 2GB N/A
Socket orientation available Vertical,Horizontal,

22.5 degree

Vertical,Horizontal,

22.5 degree

Vertical,Horizontal,

22.5 degree

Horizontal Horizontal Horizontal